激光线宽
光电子学
材料科学
激光器
可调谐激光器
硅
混合硅激光器
半导体激光器理论
注射播种机
基质(水族馆)
光学
半导体
波长
物理
海洋学
地质学
作者
Xuan Li,Junce Shi,Long Wei,Keke Ding,Yuhang Ma,Zaijin Li,Lin Li,Yi Qu,Zhongliang Qiao,Guojun Liu,Lina Zeng
出处
期刊:Crystals
[Multidisciplinary Digital Publishing Institute]
日期:2022-05-08
卷期号:12 (5): 674-674
被引量:4
标识
DOI:10.3390/cryst12050674
摘要
Widely tunable, narrow linewidth external cavity lasers on silicon substrates have many important applications, such as white-light interferometry, wavelength division multiplexing systems, coherent optical communication, and optical fiber sensor technology. Wide tuning range, high laser output power, single mode, stable spectral output, and high side-mode suppression ratio external cavity lasers have attracted much attention for their merits. In this paper, two main device-integrated structures for achieving widely tunable, narrow linewidth external cavity lasers on silicon substrates are reviewed and compared in detail, such as MRR-integrated structure and MRR-and-MZI-integrated structure of external cavity semiconductor lasers. Then, the chip-integrated structures are briefly introduced from the integration mode, such as monolithic integrated, heterogeneous integrated, and hybrid integrated. Results show that the silicon-substrate-integrated external cavity lasers are a potential way to realize a wide tuning range, high power, single mode, stable spectral output, and high side-mode suppression ratio laser output.
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