微晶
材料科学
兴奋剂
电阻率和电导率
热分解法
表面粗糙度
带隙
分析化学(期刊)
电导率
立方晶系
霍尔效应
化学工程
复合材料
冶金
结晶学
光电子学
化学
物理化学
色谱法
电气工程
工程类
标识
DOI:10.1080/10426507.2021.1986498
摘要
Undoped and Cu doped SnS films were deposited onto glass substrates by spray pyrolysis technique in order to investigate the effect of Cu doping on their physical properties. Surface investigations showed that Cu doping reduced the surface roughness of SnS films from 36.5 to 8.8 nm. XRD studies revealed that all films have recently solved large cubic phase of SnS (π-SnS) with a-lattice of 11.53 Å and Cu doping led to a reduction in crystallite size from 229 to 198 Å. Additionally, all deposited films were found to be under compressive strain. Optical band gaps of SnS:Cu varied in the range of 1.83–1.90 eV. Hall-effect measurements exhibited that all films have p-type conductivity with low hole concentration (∼1011–1012 cm−3) and high electrical resistivity (∼104–105 Ωcm).
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