Multilevel halide perovskite memristors based on optical & electrical resistive switching effects

With the aim of addressing the growing challenge of approaching the end of Moore's law and von Neumann bottleneck, the evolution of neuromorphic computing based on memristors that emulate the behaviors of the brain has attracted great attention. Organic-inorganic hybrid lead halide perovskites with inherent hybrid ionic-electronic conduction ability have been proposed as promising candidates for memristors to replace traditional charge-based memory. Here we propose MA0.85Cs0.15PbI3 memristors with high surface crystallinity and stable operation in the atmospheric environment by mixing inorganic cation Cs+ and organic cation MA+. The prepared memristors present excellent resistive switching performances including low operation voltage, high ON/OFF ratio, stable endurance, long retention, and robustness under ambient condition. Besides that, four distinct resistance states have been obtained in the above devices by modifying the operation voltages. Moreover, the resistance switching processes can be controlled both by electrical field and light illumination. Finally, this research provides utilization potentiality in the optical and electrical two-dimension controlled multilevel information devices with a total of five stable resistance states. The present work would offer an effective way to develop multifunctional high-density data-storage applications by storing multiple resistance states in a single unit cell.