绝缘体上的硅
MOSFET
表征(材料科学)
CMOS芯片
材料科学
电子工程
光电子学
双闸门
硅
电气工程
计算机科学
工程类
纳米技术
晶体管
电压
出处
期刊:Elsevier eBooks
[Elsevier]
日期:2021-01-01
卷期号:: 201-238
标识
DOI:10.1016/b978-0-12-819643-4.00012-4
摘要
The MOSFET is the favored test vehicle. Highly efficient characterization techniques, initially developed for bulk silicon CMOS, have naturally been imported in FD-SOI; more specific methods had to be especially conceived. They are described from common to elaborated ones.
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