Photoelectrochemical and photovoltaic cell performances of thermally evaporated Cu3BiS3 thin films

Photoelectrochemical cell and solar cell applications of Cu3xBi2-xS3 thin film with various ‘x’ values (x = 0, 0.25, 0.50, 0.75 and 1) are studied in the present investigation. Phase pure orthorhombic structured Cu3xBi2-xS3 (x = 1) is confirmed from the structural analysis. All the films have higher optical absorption in the visible region and the bandgap values are ranging from 2.26 eV to 1.81 eV for Cu3xBi2-xS3 (x = 0 to 1) films. Morphological analysis showed the uniform distribution of spherical shaped particles of Cu3xBi2-xS3 over the substrate. AFM analysis indicates decrease in surface roughness with increase of ‘x’ values. Electrical studies carried out using Hall effect analysis confirms ‘p’ type conductivity of Cu3BiS3. The photoconversion efficiency through the photoelectrochemical cell performance (PEC) of FTO/Cu3xBi2-xS3 (x = 0.25 to 1) films and solar cell behavior of FTO/Cu3xBi2-xS3 (x = 0.25 to 1)/CdS/Ag devices are reported.