Mott localization in the van der Waals crystal CrI3: A GGA+DMFT study

Using the generalized gradient approximation plus dynamical mean-field theory ($\mathrm{GGA}+\mathrm{DMFT}$) we confirm the importance of multi-orbital dynamical correlations in determining the paramagnetic insulating state of $\mathrm{Cr}{\mathrm{I}}_{3}$. While the ferromagnetic phase reveals weak electronic correlation effects due to strong spin-orbital polarization, the Mott insulating state of paramagnetic $\mathrm{Cr}{\mathrm{I}}_{3}$ crystal is shown to be driven by the interplay between orbital-dependent one-electron lineshape and multi-orbital electronic interactions. To probe the paramagnetic Mott insulating state we performed x-ray absorption spectroscopy (XAS) measurements for the two structural phases of $\mathrm{Cr}{\mathrm{I}}_{3}$. Our study is relevant to understanding the orbital-selective electronic structure reconstruction of Mott insulators and should be applicable to other van der Waals bonded materials from bulk to the ultrathin limit.