InAs-based quantum cascade lasers grown on on-axis (001) silicon substrate

We present InAs/AlSb quantum cascade lasers (QCLs) monolithically integrated on an on-axis (001) Si substrate. The lasers emit near 8 μm with threshold current densities of 0.92–0.95 kA/cm2 at 300 K for 3.6-mm-long devices and operate in pulsed mode up to 410 K. QCLs of the same design grown for comparison on a native InAs substrate demonstrated a threshold current density of 0.75 kA/cm2 and the same maximum operating temperature. The low threshold current density of the QCLs grown on Si makes them suitable for photonic integrated sensor implementation.