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S-Doped ZnSnO3 Nanoparticles with Narrow Band Gaps for Photocatalytic Wastewater Treatment

兴奋剂 光催化 材料科学 罗丹明B 带隙 可见光谱 吸附 X射线光电子能谱 比表面积 辐照 纳米技术 化学工程 光电子学 催化作用 化学 有机化学 工程类 物理 核物理学
作者
Runjiang Guo,Ran Tian,Dongliang Shi,Hua Li,Hezhou Liu
出处
期刊:ACS applied nano materials [American Chemical Society]
卷期号:2 (12): 7755-7765 被引量:43
标识
DOI:10.1021/acsanm.9b01804
摘要

Nowadays, obtaining photocatalysts with a narrow band gap that can degrade contamination under visible light has been a hot topic in the field of environmental protection. In this report, the S-doped hierarchically structured ZnSnO3 with a high S doping ratio, a narrow band gap, and a large specific surface area is synthesized via a two-step hydrothermal method. ZIF-8 was used as the Zn source to synthesize ZnSnO3 with a hollow structure for the first time. Characterization techniques to confirm doping by S in the ZnSnO3 structure include the use of X-ray photoelectron and energy-dispersive spectroscopies. Owing to the hollow-structured ZnSnO3 precursor, S-doped ZnSnO3 demonstrated a large specific surface area (up to 80.63 m2/g) that is favorable for the strong adsorption of reactants. In addition, the S-doping ratio is as high as 90%, which is much higher than that of other related work. Because of the elevated S 3p energy level, the band gap of S-doped ZnSnO3 is rapidly decreased from 3.7 to 2.4 eV, which gives S-doped ZnSnO3 a higher efficiency in the utilization of visible light. Because of the enhanced adsorption capabilities and decreased band gap, the as-synthesized nanocomposite can be used as a high-efficiency photocatalyst for wastewater treatment. About 36% rhodamine B (RhB) is absorbed by S-doped ZnSnO3 even before 350 W Xe-lamp irradiation. After being irradiated under visible light for about 80 min, the RhB is almost completely degraded (degradation efficiency ≈90%) using S-doped ZnSnO3, which is much faster than using pure ZnSnO3 or other zinc–tin oxide-based photocatalysts. In this report, detailed discussions are also given for the synthesis process of hollow-structured ZnSnO3 and the mechanism of narrowing the band gap via S doping.
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