Fabrication process and performances of a new type of GaAs-GaAlAs cascade solar cell

A novel cascade solar cell with two junctions and three terminals has been fabricated. The cell consists of a GaAs P-N junction covered with a Ga .8 Al .2 As N-P junction. This structure has been realized using a process that involves a minimum number of epitaxial layers and an easy fabrication process. The cell has been tested at different sun concentrations. The conversion efficiency is 20.5% at 80 suns and decreases to 16.2% at 500 suns.