Performance Optimization of Thin Film Cu(In,Ga)Se2 Solar Cell using BSF Layer

This research work offers numerical analysis of CIGS solar cell designing an ultrathin absorber layer. The CIGS structure is outperformed from the theoretical and experimental evaluation considering the physical properties, dimensions and thickness of various layers of solar cell. Concentration of gallium within CIGS (Cu (In, Gа) Sе 2 ) has major influence on the efficiency attributed to CIGS based solar cell and maximum power conversion efficiency of 27.26% is attained by thin film proposed solar cell due to presence of Amorphous Silicon (a-Si) acting as hole transport layer. Cell configuration has been designed by considering 400nm absorbent layer. In this work consequences of variation in thickness and variation in defect density of CIGS absorber layer has been examined separately. On rising defect density efficiency of opposed configuration start decreasing. Numerical simulation technique for CIGS thin film solar cell has been evaluated with the help of SCAP-1D simulator.