Enhanced performance of GaN-based visible flip-chip mini-LEDs with highly reflective full-angle distributed Bragg reflectors

High-efficiency GaN-based visible flip-chip miniaturized-light emitting diodes (FC mini-LEDs) are desirable for developing white LED-backlit liquid crystal displays. Here, we propose a full-angle Ti 3 O 5 /SiO 2 distributed Bragg reflector (DBR) for blue and green FC mini-LEDs to enhance the device performance. The proposed full-angle Ti 3 O 5 /SiO 2 DBR is composed of different single-DBR stacks optimized for central wavelength in blue, green, and red light wavelength regions, resulting in wider reflective bandwidth and less angular dependence. Furthermore, we demonstrate two types of GaN-based FC mini-LEDs with indium-tin oxide (ITO)/DBR and Ag/TiW p-type ohmic contacts. Experimental results exhibit that the reflectivity of full-angle DBR is higher than that of Ag/TiW in the light wavelength range of 420 to 580 nm as the incident angle of light increases from 0° to 60°. As a result, the light output powers (LOPs) of blue and green FC mini-LEDs with ITO/DBR are enhanced by 7.7% and 7.3% in comparison to blue and green FC mini-LEDs with Ag/TiW under an injection current of 10 mA. In addition, compared with FC mini-LED with Ag/TiW, light intensity of FC mini-LED with ITO/DBR is improved in side direction, which is beneficial to mix light in backlight system of liquid crystal displays (LCDs).