Aggregation Control, Surface Passivation, and Optimization of Device Structure toward Near‐Infrared Perovskite Quantum‐Dot Light‐Emitting Diodes with an EQE up to 15.4% (Adv. Mater. 18/2022)

Perovskite Light-Emitting Diodes A comprehensive optimization strategy leads to high-efficiency near-infrared quantum dot (QD)-based light-emitting diodes (QLEDs), as reported in article 2109785 by Zong-Liang Tseng, Shun-Wei Liu, Ken-Tsung Wong, and co-workers. Post-treatment of encapsulated FAPbI3 QDs reduces QD surface defects, and the passivated QDs dispersed in n-octane are effectively spin-coated on top of a treated electrode, leading to full-coverage, smooth, and dense QD films. The resulting QLED devices have electroluminescence λmax at 772 nm with external quantum efficiency up to 15.4% at a current density of 0.54 mA cm−2 (2.6 V).