Growth of α-(AlGa)2O3 alloy thin films on c-sapphire substrates by mist chemical vapor deposition using acetylacetonated Al and Ga solutions

Abstract α -Ga 2 O 3 is a semi-stable phase of Ga 2 O 3 and is known as an ultra-wide-bandgap semiconductor material. α -(AlGa) 2 O 3 alloys are important for their applications in electronic and optoelectronic devices. We investigated the growth mechanism and process of α -(AlGa) 2 O 3 alloys by mist chemical vapor deposition using acetylacetonated Al and Ga aqueous solutions. The contribution of acetylacetonated Al ions to the epitaxial growth was investigated. The effects of an anchoring mechanism on the mosaic spread were experimentally evaluated. Investigating 10 1 ¯ 4 X-ray diffraction profiles, strain relaxation processes in film formations are discussed.