Improving In0.37Ga0.63N MSM Photodetectors by Using a Recessed-Electrode Structure

InGaN metal-semiconductor-metal photodetectors (MSM-PDs) with recessed electrodes were fabricated When compared with the conventional planar MSM-PD. it was found that measured photocurrent and photocurrent-to-dark-current contrasting ratios are both much larger for a MSM-PD with recessed electrodes With a 5V applied bias and an incidental light wavelength of 470 nm. it was found that the measured responsivities were 0.144 and 0.038 A/W for the MSM-PDs with and without recessed electrodes, respectively.