Perpendicular-anisotropy CoFeB-MgO based magnetic tunnel junctions scaling down to 1X nm

CoFeB-MgO based magnetic tunnel junction with perpendicular easy axis (p-MTJ) shows a high potential to be used in spintronics based very large scale integrated circuits and spin-transfer-torque magnetorestive random access memories. In this paper, we review development of p-MTJ using single CoFeB-MgO and double CoFeB-MgO interface structures. The TMR ratio shows 164% after annealing at 400 °C, indicating the CoFeB-MgO p-MTJs have capability for back-end-of-line. Scaling properties of p-MTJs using double CoFeB-MgO interface structure are also reviewed.