Ionizing Radiation Effects in MOS Devices and Circuits

HomeRadiologyVol. 174, No. 3 PreviousNext ReviewsIonizing Radiation Effects in MOS Devices and CircuitsDavid S. GoodenDavid S. GoodenDavid S. GoodenPublished Online:Mar 1 1990https://doi.org/10.1148/radiology.174.3.886MoreSectionsPDF ToolsImage ViewerAdd to favoritesCiteTrack CitationsPermissionsReprints ShareShare onFacebookTwitterLinked In Article HistoryPublished in print: Mar 1990 FiguresReferencesRelatedDetailsCited ByInfluence of ionizing radiation on the parameters of p-channel MOS transistorsYu. V.Bogatyrev, D. A.Aharodnikau, S. B.Lastovsky, A. V.Ket’ko, M. M.Krechko, S. V.Shpakovsky, P. V.Rubanov, G. A.Protopopov, P. A.Chubunov2023 | Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series, Vol. 67, No. 42017 IEEE 3rd International Symposium in Robotics and Manufacturing Automation (ROMA)Erman AzwanYahya, RamaniKannan, ZuhairiBaharudin, SaranyaKrishnamurthy2017Recommended Articles RSNA Education Exhibits RSNA Case Collection Vol. 174, No. 3 Metrics Altmetric Score PDF download