电阻器
芯片级封装
材料科学
薄脆饼
可靠性(半导体)
CMOS芯片
电子工程
光电子学
电气工程
工程类
热力学
物理
功率(物理)
电压
作者
S. José,J. Bisschop,V. Girault,L. van Marwijk,J. Zhang,S. Nath
标识
DOI:10.1109/iirw.2016.7904904
摘要
This paper presents the long-term stability of integrated CMOS resistors in a 40nm technology node. Unsilicided polysilicon and diffusion resistors with two different geometries were investigated. The thermal stability of the resistors was studied at different stress temperatures. Some resistors were subjected to the critical bake temperature in the WLCSP (Wafer Level Chip Scale Packaging) assembly process. The resistance shifts were measured at different stress temperatures after the bake. It was found that WLCSP thermal budget has a significant influence on the resistor shift characteristics in the case of p-poly resistors.
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