The effects of process temperature on the work function modulation of ALD HfO2 MOS device with plasma enhanced ALD TiN metal gate using TDMAT precursor
作者
Young Jin Kim,Dong-Hwan Lim,Hoon Hee Han,Andrey Sokolov Sergeevich,Yu‐Rim Jeon,Jae Ho Lee,Seok Ki Son,Changhwan Choi