重整化
物理
电子
凝聚态物理
半导体
成像体模
零(语言学)
投影机
背景(考古学)
带隙
量子力学
光学
古生物学
哲学
语言学
生物
作者
Manuel Engel,Henrique Miranda,Laurent Chaput,Atsushi Togo,Carla Verdi,Martijn Marsman,Georg Kresse
出处
期刊:Physical review
[American Physical Society]
日期:2022-09-29
卷期号:106 (9)
被引量:22
标识
DOI:10.1103/physrevb.106.094316
摘要
Electron-phonon physics has become an integral part of today's materials science world. In this work, the authors present $a\phantom{\rule{0}{0ex}}b$ $i\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}o$ results for the zero-point renormalization of the band gap of various semiconductors and insulators. They use a new implementation of the VASP code that utilizes the sophisticated projector augmented wave method to calculate the electron-phonon perturbation. Two complementary ways of treating the all-electron information are discussed in this context.
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