UV-activated semiconductor gas sensor response measurement for formaldehyde detection

The gas sensing characteristics of ultraviolet light-emitting diodes (UV-LEDs)-activated semiconductor sensors were investigated to detect formaldehyde (HCHO) as a model volatile organic compound (VOC). As the major drawback of formaldehyde gas sensors is the low durability of the sensing material, efforts were made to establish a suitable metal oxide semiconductor and to enhance its stability throughout the sensing process. In2O3 nanoparticles (NPs) as the sensing material showed restructuring caused by exposure to different concentrations of formaldehyde in the presence of UV radiation when its morphology and structure were analyzed. UV radiation in the presence of formaldehyde was found to play a critical role in nanoparticles agglomeration, as well as its response inconsistency and instability. The novel method of measuring UV radiation elimination in the initial stages of the response curve was deemed effective for sensing layer preservation in this study. The scanning electron microscopy (SEM) results showed that this approach prevented any notable deformation in the nanoparticles' shape and size and resulted in reproducible responses to various formaldehyde concentrations (10–50 ppm) in the steady-state and transient (5 min exposure) phases of the response curve. Hence, a short-time UV exposure has the potential to be applied in practical gas sensing applications in which the sensor can be automatically turned off a few minutes after any target gas detection. The gas sensor response slope in the transient phase of the response curve was found to be a very good indicator of target gas concentration and to obtain fast and consistent results while preserving the sensing material from restructuring. The findings of this study can be incorporated into the development of UV-LED-activated gas sensors where stable and fast response measurements of VOCs are required.