Controlled Synthesis of Large-Scale Uniform Bi2Se3 Thin Films for Self-Powered and Broadband Photodetection

High Resolution Image Download MS PowerPoint Slide Bi 2 Se 3 has drawn substantial attention due to its high carrier mobility and superior thermal conductivity. In this study, large-scale and high-quality Bi 2 Se 3 thin films were successfully synthesized via the low-pressure vapor deposition method, and the growth mechanism was investigated comprehensively. Furthermore, photodetectors based on Bi 2 Se 3 films were fabricated, and the photoelectric properties of the films were investigated. The results demonstrated that the Bi 2 Se 3 photodetector based on SiO 2 /Si exhibited high responsivity (15.2, 41.3, 38.9, and 20.7 μA/W) from visible (VIS) to near-infrared (NIR) wavelengths and can be performed without any bias voltage. To explore the potential application in flexible photodevices, Bi 2 Se 3 films were directly deposited on a polyimide (PI) substrate to create a flexible photodetector. Similar to the rigid detector, the flexible photodetector exhibited self-powering ability and high responsivity (21.1 μA/W). Moreover, the as-fabricated flexible photodetector exhibited excellent mechanical flexibility and stable photoresponse after the bending test and curvature test. Our work provides valuable experience and lays a solid foundation for the preparation of large-scale and high-quality Bi 2 Se 3 films. It also highlights the great potential of vapor deposited atomic layer Bi 2 Se 3 films in the fields of multifunctional detectors.