WSe2 Field-effect Transistor with Electron-beam-induced W-shaped IV Characteristic and its Application to a Ternary NAND Gate

We report WSe 2 homojunction-based field-effect transistors (FETs) with W-shaped transfer IV characteristics, enabled by area-selective tailoring of the WSe 2 channel work function with the electron-beam treatment. We demonstrate that FETs with such IV curves are suitable for the implementation of the two-input ternary NAND logic gate, one of the essential building blocks required for the realization of a functionally complete set of logic gates in ternary logic.