Metal–Ferroelectric–Semiconductor Tunnel Junction: Essential Physics and Design Explorations

The essential physics of the ferroelectric tunnel junction (FTJ) is assessed with technology computer-aided design (TCAD) simulations and analytical models. With experimental data calibrations, a TCAD simulation framework including electrostatic potentials, ferroelectric (FE) polarizations, and nonlocal tunneling is built. Full regions of the FTJ operations, including the read/write, are then explored. Key parameters such as the memory state threshold voltages ( ${V}_{\text {mth}}$ ) and the region boundary voltages are defined, and their model formulations are developed. With the essential physics captured, FTJ figure-of-merits (FoMs) are accessed with not only tunneling electroresistance (TER), but also power consumption. Design parameters from FE layer thickness, polarizations, and coercive field to silicon doping and metal work functions are studied, with their impacts on key FTJ FoMs evaluated.