二硒化钨
单层
费米能级
密度泛函理论
材料科学
钨
兴奋剂
X射线光电子能谱
紫外光电子能谱
电子
价(化学)
激子
二硒醚
光化学
化学
硒
光电子学
电子结构
纳米技术
凝聚态物理
计算化学
核磁共振
冶金
催化作用
有机化学
量子力学
过渡金属
生物化学
物理
作者
E. Katsipoulaki,Georgios Vailakis,Ιωάννα Δεμερίδου,Dimitrios Karfaridis,P. Patsalas,Kenji Watanabe,Takashi Taniguchi,Ioannis Paradisanos,Georgios Kopidakis,Γ. Κιοσέογλου,Emmanuel Stratakis
出处
期刊:2D materials
[IOP Publishing]
日期:2023-07-21
卷期号:10 (4): 045008-045008
被引量:1
标识
DOI:10.1088/2053-1583/ace980
摘要
Abstract Modulation of the Fermi level using an ultraviolet (UV)-assisted photochemical method is demonstrated in tungsten diselenide monolayers. Systematic shifts and relative intensities between charged and neutral exciton species indicate a progressive and controllable decrease of the electron density and switch tungsten diselenide from n-type to a p-type semiconductor. The presence of chlorine in the 2D crystal shifts the Fermi level closer to the valence band while the effect can be only partially reversible via continuous wave laser rastering process. Chlorine species in the lattice are validated by x-ray photoelectron spectroscopy, while density functional theory calculations predict that adsorption of chlorine on the selenium vacancy sites leads to p-type doping. The results of our study indicate that photochemical techniques have the potential to enhance the performance of various 2D materials, making them suitable for integrated optoelectronics such as lateral nanopatterned p–n junctions.
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