Integration of Novel High-Frequency Transformer With Silicon-Carbide Schottky Diodes

This paper presents a novel and compact structure which integrates silicon-carbide (SiC) Schottky diodes within a high-frequency transformer (HFT). The proposed structure would reduce the volume of a power converter and in turn the system to which it is applied. It would also greatly reduce the leakage inductances of an HFT as well as the inductive electromagnetic interference (EMI) to surrounding components and devices. A prototype HFT shaped much like a torus is designed for integration with SiC Schottky diodes. The three-dimensional (3D) finite element method (FEM) simulation technique is used to design and analyze the magnetic structure of the HFT including the space reserved for the SiC Schottky diodes. Experimental results are presented for both the HFT as a separate component and as a system integrated with SiC Schottky diodes.