材料科学
光探测
异质结
光电子学
肖特基二极管
肖特基势垒
紫外线
光电探测器
量子隧道
金属半导体结
晶体管
探测器
电压
光学
电气工程
物理
工程类
二极管
作者
Teng Zhan,Jianwen Sun,Tao Feng,Yulong Zhang,Binru Zhou,Banghong Zhang,Junxi Wang,P.M. Sarro,Guoqi Zhang,Zewen Liu,Xiaoyan Yi,Jinmin Li
摘要
A novel type of Schottky junction-based heterostructure UV detector integrates a AlGaN/GaN 2DEG field-effect transistor and a Ti/AlGaN Schottky junction. SE, PF emission and FN tunneling mechanisms are observed when the device is working at different reverse bias voltages.
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