CMOS芯片
发射机
物理
绝缘体上的硅
电气工程
电子工程
计算机科学
拓扑(电路)
光电子学
频道(广播)
硅
工程类
作者
Jingbo Shi,Han Liu,Weiyou Yang,Ming Jin,Haowen Shu,Fengli Yang,Lei Shi,Yuansheng Tao,J. Deng,Ruixuan Chen,Changhao Han,Jian Liu,Nanjian Wu,Nan Qi,Liyuan Liu
标识
DOI:10.1109/iscas46773.2023.10181563
摘要
A 800G integrated silicon-photonic transmitter is presented, including a 16-channel photonic integrated chip (PIC) and two electrical chiplets (EICs) that are realized based on an arrayed travelling wave dual-drive Mach-Zehnder modulator (MZM) and two 8-channel CMOS drivers. The proposed multi-channel PIC is fabricated on a high-resistance silicon-on-insulator (SOI) wafer with a 220 nm thick silicon layer and a $\mathbf{2}\ \boldsymbol{\mu} \mathbf{m}$ thick buried oxide (BOX) using the foundry-ready CMOS process, while the drivers are implemented in a standard $\mathbf{65}\mathbf{nm}$ CMOS process. The driver employs a combination of distributed architecture, 2-tap feedforward equalization (FFE) and push-pull output stage, experimentally exhibiting an averaged bandwidth higher than 28.5GHz and a differential swing of 4.0Vpp on $\mathbf{50}\mathbf{\Omega}$ load, respectively. The 50Gb/s electrical eye-diagram is measured with 1.41ps rms-jitter, while the optical extinction ratio (ER) exceeds 3.0dB with 5.35pJ/bit power efficiency.
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