钼
材料科学
原子层沉积
薄膜
退火(玻璃)
氢
图层(电子)
沉积(地质)
氮化物
化学工程
冶金
无机化学
复合材料
纳米技术
化学
古生物学
有机化学
沉积物
工程类
生物
作者
Jeong Hyeon Park,Ye Won Kim,Myeong Ho Kim,Jinsik Kim,Woojin Jeon
标识
DOI:10.1021/acsaelm.3c00711
摘要
In this study, we developed a Mo metal thin film deposition process consisting of two steps: Mo2N thin film deposition using plasma-enhanced atomic layer deposition, followed by rapid thermal annealing. The mechanism underlying the reduction of Mo2N during the post-deposition annealing was investigated. Agglomeration during the reduction of Mo2N to Mo was successfully suppressed by using a hydrogen-permeable mechanical capping layer. Finally, a Mo thin film formation process with low resistance, even at a thickness of 5 nm, was achieved.
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