共发射极
钝化
薄脆饼
材料科学
光电子学
制作
氧化物
光伏系统
硅
优化设计
纳米技术
工程物理
电压
太阳能电池
晶体硅
隧道枢纽
电子工程
电接点
单晶硅
电效率
吸收(声学)
工作(物理)
多晶硅
能量转换效率
偏压
作者
Muhammad Quddamah Khokhar,Hasnain Yousuf,Alamgeer Alamgeer,Mengmeng Chu,Rafi Ur Rahman,Maha Nur Aida,Salisu Mohammed,Xiaobo Wang,Junsin Yi
标识
DOI:10.1002/ente.202501437
摘要
This study investigates the performance optimization of p‐type tunnel oxide passivated contact (p‐TOPCon) solar cells through comparative analysis of front and rear emitter configurations. The objective is to address efficiency limitations by identifying which architecture offers superior electrical performance, thereby informing optimal design strategies for industrial applications. Numerical simulations are conducted using the Quokka3 tool to evaluate the impact of emitter placement, wafer resistivity, bulk carrier lifetime, and contact selectivity under identical conditions. Results indicate that the rear emitter configuration delivers better passivation and a higher open‐circuit voltage ( V oc = 715 mV), achieving a peak efficiency of 24.21%, while the front emitter design demonstrates advantages in light absorption and fabrication simplicity. Future work will extend the analysis to include n‐type polycrystalline silicon contacts and explore manufacturable pathways to further increase efficiency in commercial p‐TOPCon cells.
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