材料科学
四面体
格子(音乐)
光致发光
锡
紫外线
激发态
结构稳定性
二价
化学物理
晶体结构
光电子学
六方晶系
热稳定性
电子结构
不稳定性
光伏
纳米技术
Crystal(编程语言)
凝聚态物理
领域(数学)
结晶学
分子物理学
半导体
单晶
作者
Linan Wang,Dongdong Chu,Miriding Mutailipu,Hongshan Wang,Juanjuan Lu,Hongchao Xie,Zuxin Chen,Shilie Pan,Junjie Li
标识
DOI:10.1002/adfm.202515259
摘要
Abstract Divalent tin (Sn 2+ ) compounds possess unique electronic configurations that make them promising candidates for advanced optoelectronic materials. However, their practical development is challenged by the inherent instability of Sn 2+ , which readily oxidizes to Sn 4+ . Here, a confinement‐engineered strategy is reported to stabilize Sn 2+ within a prismatic crystal field in the lattice, and eleven new chalcogenides A II 0.5 B II 3 C III 3 Q VI 8 (where A II = Sn, Pb; B II = Mg, Mn; C III = Al, Ga; Q VI = S, Se), including five Sn 2+ ‐based compounds, are rationally designed and synthesized. The compounds crystallize in the P space group, featuring rare [A II Q 6 ] triangular prisms, [B II Q 6 ] octahedra, and [C III Q 4 ] tetrahedra interconnected through simultaneous vertex‐, edge‐, face‐sharing triple connectivity, which confers exceptional structural stability and flexibility. Optically, these compounds exhibit broadband‐tunable photoluminescence, spanning from visible to near‐infrared regions (400–1000 nm) excited by ultraviolet sources. Moreover, the representative Sn 0.5 Mg 3 Ga 3 S 8 exhibits a strong second‐harmonic generation response of 1.5 × AgGaS 2 , and a high laser‐induced damage threshold of 3.0 × AgGaS 2 . Theoretical calculations reveal that the optical properties stem from the unique [SnS 6 ] and/or [GaS 4 ] units. The findings highlight the dual functionality of Sn 2+ ‐based chalcogenides and open an avenue for the design of advanced functional materials through confinement engineering within the rigid‐yet‐flexible frameworks.
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