Reversible nanocracks-induced resistive switching manipulated by ferroelectric polarizing in Te/PMN-PT heterostructures

Ferroelectricity-based storage technology is anticipated to achieve nonvolatile, low-power, and high-density storage in integrated field circuits. Here, the phenomena of electrically reversible switching of nanocracks in the tellurium film/ferroelectric PMN-PT heterojunctions are discussed. Upon the application of external electric fields (±2 kV/cm), the nonvolatile resistance on-off ratio reached over 106 at room temperature. This was achieved through the opening and closing of cracks in the Te film caused by the electric-field-driven flipping of 109° ferroelectric domains in a ferroelectric single crystal. In addition, the ON/OFF resistance states remain stable even after more than 103 cycles and the retention time exceeds 6 h, demonstrating excellent fatigue resistance performance of the device. This work renders a window to design nonvolatile memory by constructing electric-field tunable nanocracks in a semiconductor film/ferroelectrics heterojunction system.