电阻随机存取存储器
计算机科学
瓶颈
横杆开关
人工神经网络
噪音(视频)
神经形态工程学
算法
电气工程
人工智能
电信
工程类
电压
嵌入式系统
图像(数学)
作者
Tommaso Stecconi,Valeria Bragaglia,Malte J. Rasch,Fabio Carta,Folkert Horst,Donato Francesco Falcone,Sofieke C. ten Kate,Nanbo Gong,Takashi Ando,Antonis Olziersky,Bert Jan Offrein
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-01-11
卷期号:24 (3): 866-872
被引量:14
标识
DOI:10.1021/acs.nanolett.3c03697
摘要
A critical bottleneck for the training of large neural networks (NNs) is communication with off-chip memory. A promising mitigation effort consists of integrating crossbar arrays of analogue memories in the Back-End-Of-Line, to store the NN parameters and efficiently perform the required synaptic operations. The "Tiki-Taka" algorithm was developed to facilitate NN training in the presence of device nonidealities. However, so far, a resistive switching device exhibiting all the fundamental Tiki-Taka requirements, which are many programmable states, a centered symmetry point, and low programming noise, was not yet demonstrated. Here, a complementary metal-oxide semiconductor (CMOS)-compatible resistive random access memory (RRAM), showing more than 30 programmable states with low noise and a symmetry point with only 5% skew from the center, is presented for the first time. These results enable generalization of Tiki-Taka training from small fully connected networks to larger long-/short-term-memory types of NN.
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