Spin‐Coating Deposited SnS2 Thin Film‐Based Memristor for Emulating Synapses

Abstract 2D materials have garnered significant attention owing to their substantial potential across various applications, including thin‐film electronics, optoelectronics, and sensor devices, particularly, the synthesis and deposition methods of the 2D materials are crucial. In this study, thin films of tin disulfide (SnS 2 ), a layer‐structured metal dichalcogenide, are deposited on an indium tin oxide (ITO) glass substrate through a spin‐coating process to prepare a sandwich‐structured resistive switching (RS) device (ITO/SnS 2 /ITO) by following magnetron sputtering of ITO as top electrode. Notably, the solution‐phased spin‐coating deposition method provides an efficient approach to enhance device performance through ion doping. By incorporating calcium ions (Ca 2+ ), the devices exhibit the potential to achieve outstanding resistive switching performance and synapse functionality. With a DC sweep, an on/off resistance ratio exceeding 100 can be sustained without degradation for up to 5000 cycles. Furthermore, the devices exhibit diverse synaptic functions, including short‐term and long‐term plasticity (STP, LTP) in both potentiation and depression processes, spike‐timing‐dependent plasticity (STDP), and paired‐pulse facilitation (PPF). The transition in electrical resistance and synaptic function can be attributed to the migration of doped Ca 2+ along the grain boundary and interlayer space of layer‐structured SnS 2 films.