The effort of finding p-type β-Ga2O3-a review of theoretical and experimental research

Doping is essential in the growth of bulk Ga₂O₃ substrates, which could help control the electrical and optical properties to meet the requirements of various types of Ga₂O₃-based devices. The n type β-Ga₂O₃ materials with dopants including Sn, Al, Si, H et al have been successfully carried out. To further improve its conductivity and optical properties, the finding of p type β-Ga₂O₃ becomes very crucial. This paper reviews the efforts about such an issue with experimental and theoretical methods, describes the achievements and limitations up to now and proposes the possible research methods to achieve the p type β-Ga₂O₃ material.