Improved contact resistance of new developed silver paste on mono-crystalline silicon wafer with ultra-low doped emitter

This report presents a silver paste, containing new developed Te-glass, with improved contact resistance on mono-crystalline silicon wafer with ultra-low doped emitters. Its FF and efficiency increase 0.5 and 0.05% respectively. The paste's contact resistivity is around 2 mOhm cm ² on 110 Ohm/sq wafer. The efficiency of the paste is quite stable when firing peak temperature varies from 740 °C to 780 °C. The SEM image reveals that the better contact resistance of the paste is from direct contact between silicon wafer and silver electrode.