激子
带隙
半导体
材料科学
结合能
光电子学
石墨烯
光谱学
凝聚态物理
纳米技术
物理
原子物理学
量子力学
作者
Zhizhan Qiu,Maxim Trushin,Hanyan Fang,Ivan Verzhbitskiy,Shiyuan Gao,Evan Laksono,Ming Yang,Pin Lyu,Jing Li,Jie Su,Mykola Telychko,Kenji Watanabe,Jishan Wu,A. H. Castro Neto,Li Yang,Goki Eda,Shaffique Adam,Jiong Lu
出处
期刊:Science Advances
[American Association for the Advancement of Science (AAAS)]
日期:2019-07-05
卷期号:5 (7)
被引量:74
标识
DOI:10.1126/sciadv.aaw2347
摘要
Understanding the remarkable excitonic effects and controlling the exciton binding energies in two-dimensional (2D) semiconductors are crucial in unlocking their full potential for use in future photonic and optoelectronic devices. Here, we demonstrate large excitonic effects and gate-tunable exciton binding energies in single-layer rhenium diselenide (ReSe2) on a back-gated graphene device. We used scanning tunneling spectroscopy and differential reflectance spectroscopy to measure the quasiparticle electronic and optical bandgap of single-layer ReSe2, respectively, yielding a large exciton binding energy of 520 meV. Further, we achieved continuous tuning of the electronic bandgap and exciton binding energy of monolayer ReSe2 by hundreds of milli-electron volts through electrostatic gating, attributed to tunable Coulomb interactions arising from the gate-controlled free carriers in graphene. Our findings open a new avenue for controlling the bandgap renormalization and exciton binding energies in 2D semiconductors for a wide range of technological applications.
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