平版印刷术
变量(数学)
电子束光刻
光学
材料科学
梁(结构)
无光罩微影
光电子学
计算机科学
抵抗
物理
纳米技术
数学
数学分析
图层(电子)
作者
Aurélien Fay,Alexis Girodon,Jacky Chartoire,J. Hazart,Sébastien Bayle,Patrick Schiavone
摘要
Electron beam Mask Writers based on Variable Shaped Beam lithography (VSB) technology write designs with elementary fragments called shots. The electron dose assigned to each shot is usually defined by mean of a classical e-beam Proximity Effects Correction (PEC) model. However, this model reaches its limits in the case of shots of small size, typically below 50 nm due to machine imperfections. We developed a new "small-shots" model and a related calibration methodology. After calibration, small-shots corrections have been applied on layouts of different complexity using the INSCALE software from Aselta Nanographics. We experimentally demonstrate a 10-fold decrease of Edge Placement Errors (EPE) on photonics and Inverse Lithography Technology structures by using small-shot correction.
科研通智能强力驱动
Strongly Powered by AbleSci AI