P‐2: High Performance of Polycrystalline Silicon TFT on Plastic Substrate Processed at Very Low Temperatures

Abstract A high performance of ultralow temperature polycrystalline silicon TFT was obtained on a plastic substrate using the optimization of an oxide‐silicon‐oxide buffer structure for an plastic substrate, the high quality SiO 2 interface layer formation between the gate dielectric film and the poly‐Si film using a plasma oxidation.