Effects of Gadolinium precursors on the magnetic properties of Gadolinium-doped Gallium Nitride for spintronic applications

The role of metal-organic precursors specifically gadolinium precursors on the resulting magnetic properties of gadolinium-doped gallium nitride (GaGdN) is investigated. Gadolinium-doping is expected to render spin-related magnetic properties in GaN for spintronic applications. To achieve and understand this, GaGdN was grown using metalorganic chemical vapor deposition using two types of gadolinium precursors - tris (2,2,6,6-tetramethyl-3,5- heptanedionate) gadolinium ((TMHD)₃Gd) and tris(cyclopentadienyl) gadolinium (Cp₃Gd). GaGdN grown using (TMHD)₃Gd showed Anomalous Hall Effect and ferromagnetism at room temperature (RT). GaGdN grown using Cp₃Gd showed ordinary Hall Effect with no signs of ferromagnetism or any spin polarization. Oxygen from (TMHD)₃Gd incorporated in GaGdN during the MOCVD growth could be responsible for the differences in magnetic properties. GaGdN shows properties at RT that are conducive for spintronic applications. However, metal-organic precursors and corresponding presence of oxygen significantly influence the spin-related capabilities of GaGdN. This work contributes towards understanding the mechanisms for spin-related properties of GaGdN that can enable its RT spintronic applications.