A 6~18GHz Ultra-Wideband LNA Using 0.13μm SiGe BiCMOS Technology

An Ultra-Wideband low-noise amplifier LNA designed in 0.13μm SiGe BiCMOS technology is presented in this paper. The inductive peaking technology is adopted to expand the bandwidth, the resistance negative feedback technology and the emitter degeneration inductive technology are adopted to improve the flatness of gain and input matching. This LNA achieves a flat gain of 14.7~16.3dB in the frequency range of 6~18GHz. The noise figure (NF) of the LNA is 2.7~3.8 dB across the band. The input return losses (S11) of the LNA are better than −16.4dB and the output return losses (S22) of the LNA are better than −14.9dB. The input 1dB compression point (IP1dB) of the LNA is −5.0dBm. The LNA dissipates 9.8mA with a 3.3V supply.