A Numerical simulation on the thermal field optimization and stress distribution in β-Ga2O3 single crystal grown by vertical Bridgman method

Abstract Gallium oxide is an emerging ultra-wide bandgap semiconductor with great potential for power electronics, yet large-sized crystal growth remains limited by defect and yield challenges. In this study, a coupled thermal-mechanical finite element model is established to analyze the thermal field optimization and stress distribution in gallium oxide crystals grown by the vertical Bridgman method. The results show that multi-heater configurations reduce power consumption and enhance radial uniformity in the furnace, but radiative shielding by the intermediate insulation layer increases axial gradients, confirming radiation as the dominant heat transfer mechanism. Stress analysis reveals that stress concentrates mainly in the shoulder and constant-diameter growth region due to crystal-crucible thermal expansion mismatch, and larger shoulder angles effectively alleviate stress in the process of single crystal growth. These findings highlight the importance of coordinated heater-insulation optimization and crucible design, providing guidance for high-quality and large-diameter gallium oxide crystal growth.