发光
材料科学
单斜晶系
猝灭(荧光)
范德瓦尔斯力
光电子学
持续发光
带隙
纳米技术
剥脱关节
光致发光
薄膜
热的
半导体
热发射
作者
Curtis Irvine,Amar K. Salih,Aviraj Ingle,Sanje Mahasivam,Bruce Cowie,Matthew R. Phillips,Vipul Bansal,Cuong Ton‐That
标识
DOI:10.1021/acsanm.6c01440
摘要
Atomically thin non-van der Waals oxides are difficult to access because strong 3D bonding resists exfoliation. Here we report an amine-assisted liquid-phase exfoliation that produces freestanding β-Ga 2 O 3 nanosheets only 2.1–2.4 nm thick with lateral sizes up to ∼10 μm, while preserving the monoclinic β-phase and a bulk-like bandgap of 4.79 ± 0.10 eV. Temperature-dependent luminescence reveals emergent 2D photophysics: self-trapped-hole emission dominates at low temperature, whereas a 2.4 eV green band exhibits negative thermal quenching from 80 to 200 K, consistent with self-trapped-hole migration to near-surface gallium-vacancy centers and highlighting opportunities for luminescent thermometry and optical sensing.
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