Calculation and study of microscopic parameters for conductive filament growth in nanoscale resistive memories

Abstract In this paper, the differential equations of the conductive filament growth are suggested on the basis of the jump conduction of ions in the dielectric film. We solved these equations by means of the average value method, obtaining the calculative formula of the forming and set time. Then, we proposed an algorithm of getting the jump rate, the jump distance, and the potential barrier. These parameters are linked with the forming and set time. As a result, the model of calculating microscopic parameters for the conductive filament growth is built. Besides calculating microscopic parameters, this model can also be used to compute the electrical parameters of ions and electrical characteristics of the conductive filament in the forming and set processes, such as the mobility of ions and the current in the process of the conductive filament growth. The calculated data of the model are consistent with the experimental results.