GaN HEMT with Enhanced Back-Barrier for Power Electronics Applications

In this paper, an enhanced structures of GaN HEMT by means of Back Barriers (BBs) is investigated to improve the electro-thermal behavior of the device for power electronics application. Different materials for the BB including GaN:UID and AlGaN were investigated. TCAD physical model was used to simulate and investigate the thermal characteristics of the GaN-HEMT. The results show an optimal performance with AlGaN barrier with respect to GaN:UID.