Design and Simulation of Normally Off High‐Electron‐Mobility Light‐Emitting Transistor

Herein, a built‐in normally off GaN‐based high‐electron‐mobility light‐emitting transistor is designed and simulated. The proposed structure can significantly minimize the device area, eliminate the parasitic component introduced by metal interconnectors, ensure a fail‐safe operation owing to its normally off operating condition, and it affords fabrication simplicity, a preferable quality for display applications. Using 2D computer‐aided design software (Silvaco's TCAD), the device's electrical and optical features are investigated, revealing good output power linearity and light intensity control by the gate voltage.