High-performance GaAs/AlGaAs graded refractive index separate confinement heterostructure lasers grown by molecular-beam epitaxy on Si3N4 masked substrates

High-performance single quantum well graded refractive index separate confinement heterostructure lasers have been grown by molecular-beam epitaxy on Si3 N4 masked substrates. Lateral optical, carrier, and current confinement is supplied by the faceting which occurs during growth. Stripe lasers fabricated on 10-μm-wide openings in the [011̄] direction have threshold currents as low as 15 mA and internal quantum efficiency of 81% for a 500-μm-long cavity.