Ultra-low leakage current recess-free thin barrier AlGaN/GaN Schottky diodes featuring hybrid MOS/MIS GET anodes with optimized MOS-gate length and LPCVD SiNx thickness

Abstract In this letter, a recess-free thin-barrier AlGaN/GaN lateral Schottky diode with a hybrid MOS/MIS gate-edge-termination (GET) anode is presented, which reduces the reverse leakage current (IR) to the nA mm⁻¹ level at a reverse bias (VR) of −200 V. High thermal stability is also demonstrated, with the leakage current limited to 304 nA/mm at 200 °C. By employing a recess-free process and optimizing both the MOS-gate length (LG) and the LPCVD SiNₓ thickness, the design balances leakage suppression with high forward-current performance, offering a new approach to high-efficiency GaN power rectifiers.