Research on Resistive Switching Mechanism of SnO 2 /SnS 2 Based Heterojunction Memory Devices

Abstract This study investigates the electrical properties of the SnO 2 /SnS 2 heterojunction as the interlayer for resistive random access memory (RRAM). In this work, (NH 4 ) 4 Sn 2 S 6 is used as a source for the production of the heterojunction. The results indicate that as the annealing temperature increases, the composition of the SnS 2 based thin film changes while the cycle‐to‐cycle stability of the device improved. The thin film is examined by X‐ray photoelectron spectroscopy (XPS), scanning electronic microscopy (SEM) and atomic force microscopy (AFM), which proves the formation of SnO 2 /SnS 2 heterojunction. Devices with SnO 2 /SnS 2 heterojunction exhibited lower operating voltages and more uniform resistive switching behavior. The RRAM can be repeatedly and consistently switched between a high‐resistance state and a low‐resistance state over 1000 cycles, with a long data retention time of > 4 × 10 4 s at room temperature. Meanwhile, this study explores the relationship between this type of resistive memory and the neuromorphic simulation of the human brain. SnO 2 /SnS 2 heterojunction with 224 PJ set power at 0.4 V pulse shows excellent resistive memory characteristics. This study provides a vital reference for high‐performance and long‐lifespan heterojunction memory devices.