Raman spectroscopy has been used for decades in academic and industrial laboratories. This rapid, non-invasive and non-destructive technique provides valuable information on material properties such as composition, crystallinity, strain/stress, doping, crystallographic orientation and structural type. Recent advancements in instrumentation have demonstrated the potential of Raman spectroscopy to meet the demands of the semiconductor industry, leading to a significant increase interest in using it as an in-line metrology solution. In this work, we present specific use cases of Raman spectroscopy for in-line metrology in the semiconductor field. More precisely, we evaluate strain/stress and crystalline quality of ultrathin Si and Ge films at the wafer scale. This study highlights the relevance of Raman spectroscopy as an in-line metrology solution in cleanroom environments for semiconductor manufacturing.