范德瓦尔斯力
自旋电子学
凝聚态物理
异质结
磁性半导体
居里温度
物理
材料科学
铁磁性
量子力学
分子
作者
Yijie Zhu,Sheng Meng,Haoshen Ye,Dongmei Bai,Jianli Wang
出处
期刊:Physical review
日期:2023-09-12
卷期号:108 (12)
标识
DOI:10.1103/physrevb.108.125413
摘要
The interface itself becomes the device with increasing miniaturization in semiconductor spintronic devices. To obtain the interface and transport behaviors of novel low-dimensional spintronic devices, a fundamental physical understanding of the van der Waals magnetic system is highly desired. The interface and transport properties of the $\mathrm{InN}/{\mathrm{VSi}}_{2}{\mathrm{P}}_{4}$ van der Waals magnetic heterostructure are studied systematically by combining first-principles calculations and Schr\"odinger-Poisson simulations. The ${\mathrm{VSi}}_{2}{\mathrm{P}}_{4}$ layer in the $\mathrm{InN}/{\mathrm{VSi}}_{2}{\mathrm{P}}_{4}$ van der Waals heterostructure possesses unique electronic and magnetic properties such as a ferromagnetic ground state, stable easy magnetization axis, high Curie temperature, and high mobility. The semiconductor to half metal transition and significantly enhanced conductivities can be realized in the $\mathrm{InN}/{\mathrm{VSi}}_{2}{\mathrm{P}}_{4}$ van der Waals heterostructure via electrostatic doping. The sheet carrier density can effectively modulate the conduction band distribution, the average charge position, and the interfacial electric fields of the $\mathrm{InN}/{\mathrm{VSi}}_{2}{\mathrm{P}}_{4}$ van der Waals heterostructure. The capacitance of the $\mathrm{InN}/{\mathrm{VSi}}_{2}{\mathrm{P}}_{4}$ van der Waals heterostructure increases with the sheet carrier density under a suitable voltage range. Our results indicate that the $\mathrm{InN}/{\mathrm{VSi}}_{2}{\mathrm{P}}_{4}$ van der Waals heterostructure is a promising material for the low-dimensional spintronic devices.
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