Interface and transport properties of InN/VSi2P4 van der Waals magnetic heterostructures

The interface itself becomes the device with increasing miniaturization in semiconductor spintronic devices. To obtain the interface and transport behaviors of novel low-dimensional spintronic devices, a fundamental physical understanding of the van der Waals magnetic system is highly desired. The interface and transport properties of the $\mathrm{InN}/{\mathrm{VSi}}_{2}{\mathrm{P}}_{4}$ van der Waals magnetic heterostructure are studied systematically by combining first-principles calculations and Schr\"odinger-Poisson simulations. The ${\mathrm{VSi}}_{2}{\mathrm{P}}_{4}$ layer in the $\mathrm{InN}/{\mathrm{VSi}}_{2}{\mathrm{P}}_{4}$ van der Waals heterostructure possesses unique electronic and magnetic properties such as a ferromagnetic ground state, stable easy magnetization axis, high Curie temperature, and high mobility. The semiconductor to half metal transition and significantly enhanced conductivities can be realized in the $\mathrm{InN}/{\mathrm{VSi}}_{2}{\mathrm{P}}_{4}$ van der Waals heterostructure via electrostatic doping. The sheet carrier density can effectively modulate the conduction band distribution, the average charge position, and the interfacial electric fields of the $\mathrm{InN}/{\mathrm{VSi}}_{2}{\mathrm{P}}_{4}$ van der Waals heterostructure. The capacitance of the $\mathrm{InN}/{\mathrm{VSi}}_{2}{\mathrm{P}}_{4}$ van der Waals heterostructure increases with the sheet carrier density under a suitable voltage range. Our results indicate that the $\mathrm{InN}/{\mathrm{VSi}}_{2}{\mathrm{P}}_{4}$ van der Waals heterostructure is a promising material for the low-dimensional spintronic devices.